With the advaneement of mieroelectronies technology towards the nanoscale, the development ofhigh-perforance dielectric materials has become the key to improving the performance of integrated circuits Atomic Layer Deposition (ALI) technology shows great potential in the preparation of high-performance Al₂O₃ lielectric materials due to its exeellent film uniformity , precise thickness control, and good interface properties. It focuses on the experimental teaching content of ALD method for preparing Al₂O₃ high-performance dielectricmaterials is designed for related majors such as microelectronies science and engineering and integrated circuits. By introducing the principles of ALD deposition technology, knowledge related to Al₂O₃ dielectricfilms, experimental operation procedures, characterization and analysis of Al₂O₃ dieleetrie films and otherprocess designs.lt aims to cultivate and improve students’ practical and innovative abilities.