As microelectronics technology advances toward the nanoscale，the development of high-performance dielectric materials has become central to enhancing integrated circuit performance．Addressing the demand for

gate dielectric materials with high dielectric constant (high-k)and low leakage current in transparent electronic devices，this paper designs an experimental module tailored for Microelectronics and Integrated Circuit Engineering programs．Focusing on the CeAlO2 /Al2O3 stacked gate dielectric as the core subject，the structure is constructed by preparing CeAlO2 thin films via a solution process and depositing a 4 nm ultra-thinAl2O3 passivation layer using Atomic Layer Deposition (ALD)technology．The experiment comprehensively covers thin film fabrication，dielectric property testing (capacitance per unit area C ox ，and leakage current density J leak )，and optical characterization (transmittance，absorption spectra)． This integrated approach cultivates students＇ systematic innovation capabilities spanning from material design to device application．The design effectively bridges semiconductor processing technology with device physics knowledge，enhancing students＇ engineering literacy in solving cutting-edge electronic device challenges．