Yb3+/Tm3+共掺层状钙钛矿型CaBi2Nb2O9 半导体的制备及上转换发光性能研究

doi:10.14139/i.cnki.cn22-228.2024.05.012

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摘要

采用固相法合成了 Yb³⁺/Tm³⁺共掺杂的层状钙钛矿型 CaBi₂Nb₂O₉ (CBN)上转换(UC)发光材料，并利用粉末 X 射线衍射(XＲD)、场发射扫描电镜(FESEM)和 UC 发射光谱研究了它们的物相结构、形貌和上转换发光性能。在 980 nm 激发下，CaBi₂Nb₂O₉ :Yb³⁺/Tm³⁺样品呈现出以 478 nm 为中心的强蓝光发射，并伴有典型的 647 nm、695 nm 弱红光发射和 783 nm 近红外发射，这归因于 Tm3+分别对应于 ¹G ₄ → ³ H ₆ 、¹ G₄ →³ F₄ 、³ F₃ →³ H₆ 和³ H₄ →³ H₆ 跃迁。功率依赖性研究表明，所有 UC 发射都是双光子过程。结果表明，CaBi₂Nb₂O₉ 是一种很有前途的 UC 发光材料。

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	张郎景
	杨芳
	舒匀
	李昱
	石艺
	李文睿
	李世坤
	彭跃红

关键词: 上转换发光层状半导体 CaBi₂Nb₂O₉

Abstract:

In this work, the Yb³⁺/Tm³⁺ co-doped layered perovskite CaBi₂Nb₂O₉ upconversion( UC )luminescent material were synthesized by the solid state method.Their erystalline structure, morphology and theUC luminescent properties were investigated through powder X-ay difiraction (XRD) , field emission scanningelectron mieroscopy (FESEM) and speetral analysis of UC emission.Under 980 nm exeitation, the CaBi₂Nb₂O₉: Yb³⁺/Tm³⁺ samples exhibits bright blue emission centered at 478 nm accompanied with typicalweak red emission at 647 and 695 nm and near infrared ( NR) emission at 783 nm, which ascribe to ¹G ₄ → ³ H ₆ 、¹ G₄ →³ F₄ 、³ F₃ →³ H₆ and ³ H₄ →³ H₆ transitions of Tm³⁺, respectively. Power dependence studies revealthat all the UC emissions are a two-photon process.The results indicate that CaBi₂Nb₂O₉ is a promisingcandidate for UC luminescent materials.

Key words: upconversion luminescence layered semiconduetor CaBi₂Nb₂O₉

发布日期: 2024-10-25

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引用本文:

张郎景 , 杨芳 , 舒匀 , 李昱 , 石艺 , 李文睿 , 李世坤 , 彭跃红 . Yb³⁺/Tm³⁺共掺层状钙钛矿型CaBi₂Nb₂O₉ 半导体的制备及上转换发光性能研究 [J]. 大学物理实验, 2024, 37(5): 63-67.
ZHANG Langjing , YANG Fang , SHU Yun, LI Yi , SHI Yi , Ll Wenrui, Ll Shikun, PENG Yuehong. The Preparation and Upconversion Luminescence Propertiesof Yb³⁺/Tm³⁺ Co-doped Layered Perovskite CaBi₂Nb₂O₉Semiconductor . Physical Experiment of College, 2024, 37(5): 63-67.

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http://dawushiyan.jlict.edu.cn/CN/10.14139/i.cnki.cn22-228.2024.05.012 或 http://dawushiyan.jlict.edu.cn/CN/Y2024/V37/I5/63

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